Evaluation of piezoelectric properties of PZT thin films for piezoMEMS applications
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The development of piezoelectric MEMS devices requires not only thin-film deposition technology but also techniques for measuring the piezoelectric properties of thin-film materials. We have established a simple and precise measurement method for the direct and converse piezoelectric coefficient e31,f using cantilever beams composed of a piezoelectric PZT thin film and a Si substrate [1]. Clear nonlinearity was observed in c-axis oriented polycrystalline PZT thin films deposited by rf-magnetron sputtering, confirming that extrinsic effects, such as a/c domain rotation and electric field-induced phase transitions, significantly influence piezoelectric properties.
